TPHR9203PL.L1Q
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070585643
- Бренд
- Toshiba
- RoHS
- Details
- Brand
- Toshiba
- Width
- 5 mm
- Brand:
- Toshiba
Цена по запросу
(от 280 ₽)
Минимальный заказ: 78 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
СИЛОВОЙ MOSFET-ТРАНЗИСТОР X35 PB-F SOP-8-ADV PD= 132 Вт F= 1 МГц СООТВЕТСТВУЕТ ТРЕБОВАНИЯМ ROHS: ДА
Технические параметры
| RoHS | Details |
| Brand | Toshiba |
| Width | 5 mm |
| Brand: | Toshiba |
| Height | 0.95 mm |
| Length | 5 mm |
| FET Type | N-Channel |
| Fall Time | 18 ns |
| Packaging | Cut Tape |
| Rise Time | 8 ns |
| Vgs (Max) | ±20V |
| Fall Time: | 18 ns |
| Rise Time: | 8 ns |
| Technology | Si |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Toshiba |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Package/Case: | SOP-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOP-Advance-8 |
| Mounting Style: | SMD/SMT |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 81 nC |
| Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 2.1V @ 500µA |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 5000 |
| Operating Temperature | 175°C(TJ) |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation | 132 W |
| Pd - Power Dissipation: | 132 W |
| Power Dissipation (Max) | 132W(Tc) |
| Supplier Device Package | 8-SOP Advance(5x5) |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 20 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 71 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Typical Turn-Off Delay Time: | 71 ns |
| Id - Continuous Drain Current | 280 A |
| Maximum Operating Temperature | +175 C |
| Drain to Source Voltage (Vdss) | 30 V |
| Id - Continuous Drain Current: | 280 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 610 uOhms |
| Rds On - Drain-Source Resistance: | 610 uOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 7540 pF @ 15 V |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Current - Continuous Drain (Id) @ 25°C | 150A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |