TPH6R30ANL.L1Q
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8010107291
- Бренд
- Toshiba
- Brand:
- Toshiba
- Series:
- TPH6R30ANL
- Military
- No
- Pin Count
- 8
Цена по запросу
(от 230 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 100V 66A с 8-контактным разъемом SOP Advance
Технические параметры
| Brand: | Toshiba |
| Series: | TPH6R30ANL |
| Military | No |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 12 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 7 ns |
| Tradename: | U-MOSVIII-H |
| Вес, г | 0.36 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Toshiba |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOP-Advance-8 |
| Supplier Package | SOP Advance |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 55 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOP |
| Особенности | - |
| Pd - Power Dissipation: | 54 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 18 ns |
| Typical Turn-Off Delay Time: | 58 ns |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 66 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Power Dissipation - (mW) | 2500 |
| Typical Gate Charge @ 10V - (nC) | 55 |
| Typical Gate Charge @ Vgs - (nC) | 27@4.5VI55@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Rds On - Drain-Source Resistance: | 5.1 mOhms |
| Maximum Drain Source Voltage - (V) | 100 |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Continuous Drain Current - (A) | 66 |
| Typical Input Capacitance @ Vds - (pF) | 3300@50V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Maximum Drain Source Resistance - (mOhm) | 6300@10V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 30 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |