TPCP8407,LF, MOSFETs Pb-F POWER MOSFET TRANSISTOR PS-8 PD=1.77W F=1MHZ
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062391622
- Артикул
- TPCP8407,LF
- Бренд
- Toshiba
- Brand:
- Toshiba
- Fall Time:
- 4 ns, 33 ns
- Rise Time:
- 5 ns, 8 ns
- Вес, г
- 0.02
Цена по запросу
(от 360 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Toshiba |
| Fall Time: | 4 ns, 33 ns |
| Rise Time: | 5 ns, 8 ns |
| Вес, г | 0.02 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Package/Case: | PS-8 |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 11.8 nC, 18 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 1.77 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 12 ns, 25 ns |
| Typical Turn-Off Delay Time: | 17 ns, 126 ns |
| Id - Continuous Drain Current: | 5 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 62.8 mOhms, 82.2 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |