TP65H150G4PS, MOSFET GAN FET 650V 13A TO220, Транзистор
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8051531705
- Артикул
- TP65H150G4PS
- Бренд
- Renesas Technology
- Brand:
- Transphorm
- Fall Time:
- 8 ns
- Packaging:
- Tube
- Rise Time:
- 5.2 ns
Цена по запросу
(от 1 010 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Transphorm |
| Fall Time: | 8 ns |
| Packaging: | Tube |
| Rise Time: | 5.2 ns |
| Вес, г | 1.38 |
| Technology: | GaN |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Transphorm |
| Package/Case: | TO-220-3 |
| Product Type: | GaN FETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | GaN FETs |
| Qg - Gate Charge: | 8 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 50 |
| Pd - Power Dissipation: | 52 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 37.8 ns |
| Typical Turn-Off Delay Time: | 48 ns |
| Id - Continuous Drain Current: | 13 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.8 V |