TP2640LG-G, Транзистор P-МОП, -400В, -700мА, 740мВт, SO8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8065531095
- Артикул
- TP2640LG-G
- Бренд
- Microchip Technology
- Type:
- FET
- Brand:
- Microchip Technology
- Product:
- MOSFET Small Signals
- Fall Time:
- 15 ns
Цена по запросу
(от 350 ₽)
Минимальный заказ: 3300 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | FET |
| Brand: | Microchip Technology |
| Product: | MOSFET Small Signals |
| Fall Time: | 15 ns |
| Rise Time: | 15 ns |
| Вес, г | 0.08 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3300 |
| Pd - Power Dissipation: | 1.3 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 60 ns |
| Id - Continuous Drain Current: | 210 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 15 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |