TP2540 P-Channel MOSFET, 125 mA, 400 V, 3-Pin TO-243AA TP2540N8-G
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8024552789
- Артикул
- TP2540N8-G
- Бренд
- Microchip Technology
- Case
- SOT89-3
- Width
- 2.6mm
- Brand:
- Microchip Technology
- Series
- TP2540
Цена по запросу
(от 531 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Этот низкопороговый транзистор с режимом усиления (обычно выключенный) использует вертикальную структуру DMOS и xорошо зарекомендовавший себя процесс изготовления кремниевыx затворов.
Технические параметры
| Case | SOT89-3 |
| Width | 2.6mm |
| Brand: | Microchip Technology |
| Series | TP2540 |
| FET Type | P-Channel |
| Mounting | SMD |
| Product: | MOSFET Small Signal |
| Packaging | Cut Tape(CT) |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Fall Time: | 13 ns |
| Rise Time: | 10 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Microchip Technology |
| Package Type | TO-243AA |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | -125mA |
| Manufacturer: | Microchip |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-243AA |
| Kind of channel | enhanced |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 1.6W |
| Product Category: | MOSFET |
| Type of transistor | P-MOSFET |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Структура | P-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 25Ω |
| Drain-source voltage | -400V |
| Pulsed drain current | -1.2A |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | 1.8V |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Power Dissipation (Pd) | 1.6W |
| Rds On (Max) @ Id, Vgs | 25 Ohm @ 100mA, 10V |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 1.6 W |
| Power Dissipation (Max) | 1.6W(Ta) |
| Supplier Device Package | TO-243AA(SOT-89) |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.6 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 10 ns |
| Input Capacitance (Ciss@Vds) | 125pF@0V |
| Maximum Drain Source Voltage | 400 V |
| Typical Turn-Off Delay Time: | 20 ns |
| Continuous Drain Current (Id) | 1.1A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 400V |
| Id - Continuous Drain Current: | 125 mA |
| Maximum Gate Threshold Voltage | 2.4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 100 mS |
| Maximum Drain Source Resistance | 30 Ω |
| Maximum Continuous Drain Current | 125 mA |
| Rds On - Drain-Source Resistance: | 25 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 125pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 125mA(Tj) |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Пороговое напряжение на затворе | 2.4V@1mA |
| Максимальное напряжение сток-исток Uси,В | 400 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 243 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.6 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 25Ω@10V, 100mA |