TP2510N8-G, Транзистор P-МОП, -100В, -1,5А, 1,6Вт, SOT89-3
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- Код товара
- 8064175495
- Артикул
- TP2510N8-G
- Бренд
- Microchip Technology
- Case
- SOT89-3
- Type:
- FET
- Brand:
- Microchip Technology
- Mounting
- SMD
Цена по запросу
(от 218 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | SOT89-3 |
| Type: | FET |
| Brand: | Microchip Technology |
| Mounting | SMD |
| Product: | MOSFET Small Signal |
| Fall Time: | 15 ns |
| Rise Time: | 15 ns |
| Вес, г | 0.12 |
| Technology: | Si |
| Manufacturer | MICROCHIP TECHNOLOGY |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 1.6W |
| Product Category: | MOSFET |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 3.5Ω |
| Drain-source voltage | -100V |
| Pulsed drain current | -1.5A |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 1.6 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 20 ns |
| Id - Continuous Drain Current: | 480 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 300 mS |
| Rds On - Drain-Source Resistance: | 3.5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |