TN2404K-T1-GE3, Транзистор N-MOSFET, полевой, 240В, 0,16А, 0,23Вт, SOT23
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- Код товара
- 8070047823
- Артикул
- TN2404K-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Width
- 1.4mm
- Brand:
- Vishay/Siliconix
- EU RoHS
- Compliant
Цена по запросу
(от 88,29 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 240 В 0,2 А, 3-контактный SOT-23 T/R
Технические параметры
| PPAP | No |
| Width | 1.4mm |
| Brand: | Vishay/Siliconix |
| EU RoHS | Compliant |
| Series: | TN2 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 16 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 12 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | TN2404K-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.87 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 360mW |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 12 |
| Pd - Power Dissipation: | 360 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 510 mW |
| Typical Gate Charge @ Vgs | 4.87 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 8nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 5 ns |
| Maximum Drain Source Voltage | 240 V |
| Typical Turn-Off Delay Time: | 35 ns |
| Continuous Drain Current (Id) | 200mA |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 360 |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 4.87 |
| Typical Gate Charge @ Vgs (nC) | 4.87@10V |
| Forward Transconductance - Min: | 1.6 S |
| Maximum Drain Source Resistance | 6 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5 |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage (V) | 240 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Rds On - Drain-Source Resistance: | 2.2 Ohms |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.2 |
| Vds - Drain-Source Breakdown Voltage: | 257 V |
| Maximum Drain Source Resistance (mOhm) | 4000@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.65 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |