TN2106 N-Channel MOSFET, 300 mA, 60 V, 3-Pin TO-92 TN2106N3-G
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014506014
- Артикул
- TN2106N3-G
- Бренд
- Microchip Technology
- Type:
- FET
- Width
- 4.06mm
- Brand:
- Microchip Technology
- Series
- TN2106
Цена по запросу
(от 176 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Этот низкопороговый транзистор с режимом усиления (обычно выключенный) использует вертикальную структуру DMOS и xорошо зарекомендовавший себя процесс изготовления кремниевыx затворов.
Технические параметры
| Type: | FET |
| Width | 4.06mm |
| Brand: | Microchip Technology |
| Series | TN2106 |
| FET Type | N-Channel |
| Product: | MOSFET Small Signal |
| Packaging | Bulk |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Fall Time: | 5 ns |
| Packaging: | Bulk |
| Rise Time: | 5 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Microchip Technology |
| Package Type | TO-92 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-226-3, TO-92-3(TO-226AA) |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.8V |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 500mA, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 740 mW |
| Power Dissipation (Max) | 740mW(Tc) |
| Supplier Device Package | TO-92-3 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 740 mW |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 3 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 6 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 60V |
| Id - Continuous Drain Current: | 300 mA |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.6V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 150 mS |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Continuous Drain Current | 300 mA |
| Rds On - Drain-Source Resistance: | 2.5 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Current - Continuous Drain (Id) @ 25В°C | 300mA(Tj) |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.3 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.74 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |