TN0620N3-G-P002, MOSFETs N-CH Enhancmnt Mode MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005494595
- Артикул
- TN0620N3-G-P002
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Military
- No
- Product:
- MOSFET Small Signals
- Packaging
- Tape and Reel
Цена по запросу
(от 221,55 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 200 В 0,25 А, 3-контактный TO-92 T/R
Технические параметры
| Brand: | Microchip Technology |
| Military | No |
| Product: | MOSFET Small Signals |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 20 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 8 ns |
| Вес, г | 0.45 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Package/Case: | TO-92-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Supplier Package | TO-92 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-92 |
| Factory Pack Quantity: | 2000 |
| Особенности | - |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 20 ns |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 250 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Power Dissipation - (mW) | 1000 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Rds On - Drain-Source Resistance: | 8 Ohms |
| Maximum Drain Source Voltage - (V) | 200 |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Maximum Continuous Drain Current - (A) | 0.25 |
| Typical Input Capacitance @ Vds - (pF) | 110@25V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Maximum Drain Source Resistance - (mOhm) | 6000@10V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |