TN0610N3-G-P003, Transistor: N-MOSFET; unipolar; 100V; 500mA; Idm: 3.2A; 1W; TO92
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025868401
- Артикул
- TN0610N3-G-P003
- Бренд
- Microchip Technology
- Case
- TO92
- Brand:
- Microchip Technology
- Mounting
- THT
- Product:
- MOSFET Small Signal
Цена по запросу
(от 390 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | TO92 |
| Brand: | Microchip Technology |
| Mounting | THT |
| Product: | MOSFET Small Signal |
| Fall Time: | 16 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 14 ns |
| Вес, г | 0.44 |
| Technology: | Si |
| Manufacturer | MICROCHIP TECHNOLOGY |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 0.5A |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 1W |
| Product Category: | MOSFET |
| Type of transistor | N-MOSFET |
| Структура | MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 1.5Ω |
| Drain-source voltage | 100V |
| Pulsed drain current | 3.2A |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6 ns |
| Typical Turn-Off Delay Time: | 16 ns |
| Id - Continuous Drain Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 15 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 3.2 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |