TN0106N3-G-P003, Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 2A; 1W; TO92
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061924209
- Артикул
- TN0106N3-G-P003
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Product:
- MOSFET Small Signals
- Fall Time:
- 3 ns
- Packaging:
- Reel, Cut Tape
Цена по запросу
(от 170 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Microchip Technology |
| Product: | MOSFET Small Signals |
| Fall Time: | 3 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 3 ns |
| Вес, г | 0.2 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2000 |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 2 ns |
| Typical Turn-Off Delay Time: | 6 ns |
| Id - Continuous Drain Current: | 350 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |