TK7A90E.S4X
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001939855
- Бренд
- Toshiba
- Type
- Power MOSFET
- Brand:
- Toshiba
- Series:
- TK7A90E
- Mounting
- Through Hole
Цена по запросу
(от 540 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 900V 7A с 3-контактным разъемом (3+ язычка) TO-220SIS
Технические параметры
| Type | Power MOSFET |
| Brand: | Toshiba |
| Series: | TK7A90E |
| Mounting | Through Hole |
| Polarity | N |
| Packaging | Rail/Tube |
| Pin Count | 3+Tab |
| Fall Time: | 15 ns |
| Packaging: | Tube |
| Rise Time: | 20 ns |
| Tradename: | MOSVIII |
| Вес, г | 1.95 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Package Type | TO-220SIS |
| Rad Hardened | No |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Power Dissipation | 45(W) |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 32 nC |
| Number of Elements | 1 |
| Number of Channels: | 1 Channel |
| Drain-Source On-Volt | 900(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 45 W |
| Continuous Drain Current | 7(A) |
| Gate-Source Voltage (Max) | '±30(V) |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 55 ns |
| Typical Turn-Off Delay Time: | 85 ns |
| Id - Continuous Drain Current: | 7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 1.6 Ohms |
| Operating Temperature Classification | Military |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 7 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |