TK62J60W.S1VQ
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072381155
- Бренд
- Toshiba
- Tab
- Tab
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Material
- Si
Цена по запросу
(от 4 200 ₽)
Минимальный заказ: 3 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 600V 61,8A с 3-контактным разъемом (3+Tab) TO-3PN
Технические параметры
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | TO-3PN |
| Maximum IDSS (uA) | 10 |
| Process Technology | DTMOSIV |
| Standard Package Name | TO-3PN |
| Typical Fall Time (ns) | 15 |
| Typical Rise Time (ns) | 58 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 400000 |
| Typical Gate Charge @ 10V (nC) | 180 |
| Typical Gate Charge @ Vgs (nC) | 180 10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Threshold Voltage (V) | 3.7 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 61.8 |
| Typical Input Capacitance @ Vds (pF) | 6500 300V |
| Maximum Drain Source Resistance (mOhm) | 40 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |