TK3R1E04PL.S1X[S
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8073443399
- Бренд
- Toshiba
- Tab
- Tab
- PPAP
- No
- Material
- Si
- Mounting
- Through Hole
Цена по запросу
(от 250 ₽)
Минимальный заказ: 39 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH Si 40V 128A, 3-контактный (3 + язычка), трубка TO-220
Технические параметры
| Tab | Tab |
| PPAP | No |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 4.45 |
| Package Length | 10.16 |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Maximum IDSS (uA) | 10 |
| Process Technology | U-MOSIX-H |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 27 |
| Typical Rise Time (ns) | 12 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 87000 |
| Typical Gate Charge @ 10V (nC) | 63.4 |
| Typical Gate Charge @ Vgs (nC) | 63.4@10V|29.7@4.5V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Drain-Source Voltage (V) | 40 |
| Maximum Gate Threshold Voltage (V) | 2.4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Typical Input Capacitance @ Vds (pF) | 4670@20V |
| Maximum Drain-Source Resistance (mOhm) | 3.1@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |