TK20A60W,S5VX, Транзистор, 600 В 20 А 155 мОм при 10 А, 10 В 45 Вт 3,7 В при 1 мА 1 шт. Канал TO-220SIS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062883370
- Артикул
- TK20A60W,S5VX
- Бренд
- Toshiba
- Brand:
- Toshiba
- Fall Time:
- 6 ns
- Packaging:
- Tube
- Rise Time:
- 25 ns
Цена по запросу
(от 1 090 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Toshiba |
| Fall Time: | 6 ns |
| Packaging: | Tube |
| Rise Time: | 25 ns |
| Вес, г | 6.32 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Package/Case: | TO-220FP-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 48 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 50 |
| Pd - Power Dissipation: | 45 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 50 ns |
| Typical Turn-Off Delay Time: | 100 ns |
| Id - Continuous Drain Current: | 20 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 130 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.7 V |