TK190U65Z.RQ
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070528528
- Бренд
- Toshiba
- Tab
- Tab
- PPAP
- No
- Material
- Si
- Mounting
- Surface Mount
Цена по запросу
(от 470 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 650V 15A 9-контактный (8+ вкладок) ПЛАТНЫЙ T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 9 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Hex Source |
| Package Width | 10.38 |
| Package Length | 9.9 |
| Product Category | Power MOSFET |
| Supplier Package | TOLL |
| Maximum IDSS (uA) | 2 |
| Process Technology | DTMOSVI |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 14 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 130000 |
| Typical Gate Charge @ 10V (nC) | 25 |
| Typical Gate Charge @ Vgs (nC) | 25@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Drain Source Voltage (V) | 650 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 15 |
| Typical Input Capacitance @ Vds (pF) | 1370@300V |
| Maximum Drain Source Resistance (mOhm) | 190@10V |
| Maximum Gate Source Leakage Current (nA) | 1000 |