TK160F10N1L,LQ, МОП-Транзистор TO-220SM(W) МОП-Транзистор
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- Код товара
- 8062289967
- Артикул
- TK160F10N1L,LQ
- Бренд
- Toshiba
- Grade
- Automotive
- Brand:
- Toshiba
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
Цена по запросу
(от 960 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 100 В 160 А (Ta) 375 Вт (Tc) для поверxностного монтажа ДО-220 См (Вт)
Технические параметры
| Grade | Automotive |
| Brand: | Toshiba |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Fall Time: | 40 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 22 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1.59 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Mounting Type | Surface Mount |
| Product Type: | MOSFETs |
| Qualification | AEC-Q101 |
| Configuration: | Single |
| Package / Case | TO-263-3, D2PAK(2 Leads+Tab), TO-263AB |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-220SMW-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 122 nC |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | 175°C |
| Factory Pack Quantity: | 1000 |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 80A, 10V |
| Pd - Power Dissipation: | 375 W |
| Power Dissipation (Max) | 375W(Tc) |
| Supplier Device Package | TO-220SM(W) |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 42 ns |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Typical Turn-Off Delay Time: | 140 ns |
| Drain to Source Voltage (Vdss) | 100 V |
| Id - Continuous Drain Current: | 160 A |
| Maximum Operating Temperature: | +175 C |
| Rds On - Drain-Source Resistance: | 2 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 10100 pF @ 10 V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 160A(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |