TK15J50D(F) MOSFET транзистор, N-канальный, VDSS=500 В, ID=15 А, Qg=38 нКл, PD=210 Вт, RDS(ON)(max) при VGS=10 В, Ом =0,4 , 3pin-TO-3P(N) Ск
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- Код товара
- 8072253439
- Артикул
- TK15J50D(F)
- Бренд
- Toshiba
- Case
- TO3PN
- Width
- 4.8mm
- Series
- TK
- Mounting
- THT
Цена по запросу
(от 370 ₽)
Минимальный заказ: 29 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | TO3PN |
| Width | 4.8mm |
| Series | TK |
| Mounting | THT |
| Pin Count | 3 |
| Вес, г | 1 |
| Gate charge | 38nC |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | TOSHIBA |
| Package Type | TO-3PN |
| Polarisation | unipolar |
| Drain current | 15A |
| Mounting Type | Through Hole |
| Kind of channel | enhanced |
| Kind of package | tube |
| Power dissipation | 210W |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±30V |
| On-state resistance | 0.4Ω |
| Transistor Material | Si |
| Drain-source voltage | 500V |
| Power Dissipation (Pd) | 210W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 210 W |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 38nC@10V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 1.8nF@10V |
| Maximum Drain Source Voltage | 500 V |
| Continuous Drain Current (Id) | 15A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 400 mΩ |
| Maximum Continuous Drain Current | 15 A |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF@25V |