TK11S10N1L.LQ
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8009364356
- Бренд
- Toshiba
- Brand:
- Toshiba
- Series:
- TK11S10N1L
- Fall Time:
- 8 ns
- Rise Time:
- 13 ns
Цена по запросу
(от 400 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 100V 11A 3-контактный (2+Tab) DPAK+ T/R Автомобильный AEC-Q101
Технические параметры
| Brand: | Toshiba |
| Series: | TK11S10N1L |
| Fall Time: | 8 ns |
| Rise Time: | 13 ns |
| Tradename: | U-MOSVIII-H |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 65 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 29 ns |
| Typical Turn-Off Delay Time: | 36 ns |
| Id - Continuous Drain Current: | 11 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 28 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |