TK110E10PL.S1X
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070577546
- Бренд
- Toshiba
- Brand:
- Toshiba
- Fall Time:
- 9 ns
- Packaging:
- Tube
- Rise Time:
- 6 ns
Цена по запросу
(от 200 ₽)
Минимальный заказ: 111 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET TO-220 PD=87 Вт 1 МГц PWR MOSFET TRNS
Технические параметры
| Brand: | Toshiba |
| Fall Time: | 9 ns |
| Packaging: | Tube |
| Rise Time: | 6 ns |
| Tradename: | U-MOSIX-H |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Toshiba |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 33 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 87 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 20 ns |
| Typical Turn-Off Delay Time: | 43 ns |
| Id - Continuous Drain Current: | 42 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 16 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |