TJ50S06M3L(T6L1,NQ, Trans MOSFET P-CH Si 60V 50A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062367566
- Артикул
- TJ50S06M3L(T6L1,NQ
- Бренд
- Toshiba
- Tab
- Tab
- PPAP
- Unknown
- Brand:
- Toshiba
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 120 ₽)
Минимальный заказ: 260 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH Si 60V 50A автомобильный 3-контактный (2+Tab) DPAK+ T/R
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| Brand: | Toshiba |
| EU RoHS | Compliant with Exemption |
| Series: | TJ50S06M3L |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Tradename: | U-MOSVI |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Toshiba |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Product Category | Power MOSFET |
| Supplier Package | DPAK+ |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 10 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 124 nC |
| Process Technology | U-MOS VI |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 195 |
| Typical Rise Time (ns) | 77 |
| Особенности | автомобильные приложения |
| Pd - Power Dissipation: | 90 W |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +10 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 50 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 90000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 124 |
| Typical Gate Charge @ Vgs (nC) | 124@10V |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum Drain Source Voltage (V) | 60 |
| Rds On - Drain-Source Resistance: | 13.8 mOhms |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 6290@10V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 13.8@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 50 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |