TIP33CG, Bipolar Transistors - BJT 10A 100V 80W NPN
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006245505
- Артикул
- TIP33CG
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Tab
- Tab
- RoHS
- Details
- Type
- NPN
Цена по запросу
(от 450 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN, биполярный, 100В, 10А, 80Вт, TO247-3 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| RoHS | Details |
| Type | NPN |
| Brand | ON Semiconductor |
| Width | 4.9 mm(Max) |
| Height | 16.2-4 mm(Max) |
| Length | 15.2 mm(Max) |
| Series | TIP33C |
| EU RoHS | Compliant |
| Material | Si |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Вес, г | 6.5 |
| PCB changed | 3 |
| Part Status | Active |
| Unit Weight | 0.229281 oz |
| Base Current | 3A |
| Manufacturer | ON Semiconductor |
| Package Type | TO-218 |
| Корпус | TO-247 |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package Width | 5.3(Max) |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Package Height | 21.08(Max) |
| Package Length | 16.26(Max) |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | TO-247 |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 30 |
| Standard Package Name | TO-247 |
| Pd - Power Dissipation | 80 W |
| Minimum DC Current Gain | 40@1A@4V|20@3A@4V |
| Transistor Configuration | Single |
| Gain Bandwidth Product fT | 3 MHz |
| Maximum Power Dissipation | 80 W |
| Emitter- Base Voltage VEBO | 5 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 100 V |
| Continuous Collector Current | 10 A |
| Maximum DC Collector Current | 10 A |
| Maximum Emitter Base Voltage | 5 V dc |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain hfe Min | 40 |
| Maximum Collector Base Voltage | 100 V dc |
| Maximum Power Dissipation (mW) | 80000 |
| Maximum DC Collector Current (A) | 10 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Cut-off Current | 0.7mA |
| Maximum Collector Emitter Voltage | 100 V dc |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 3(Min) |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector-Emitter Saturation Voltage | 1 V |
| Maximum Continuous Collector Current | 10(Continuous)A, 15(Peak)A |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Emitter Saturation Voltage | 4 V dc |
| Maximum Collector-Emitter Saturation Voltage (V) | 4@2.5A@10A|1@0.3A@3A |
| Максимальная рассеиваемая мощность ,Вт | 80 |
| Максимально допустимый ток к ( Iк макс.А) | 10 |
| Статический коэффициент передачи тока h21э мин | 20 |
| Граничная частота коэффициента передачи тока fгр.МГц | 3 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 100 |
| Макс. напр. к-б при заданном обратном токе к и разомкнутой цепи э.(Uкбо макс),В | 100 |