TC6320K6-G, DFN-8-EP(4x4) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048188310
- Артикул
- TC6320K6-G
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- Product:
- MOSFET Small Signal
- Fall Time:
- 15 ns, 15 ns
- Rise Time:
- 15 ns, 15 ns
Цена по запросу
(от 472 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Microchip Technology |
| Product: | MOSFET Small Signal |
| Fall Time: | 15 ns, 15 ns |
| Rise Time: | 15 ns, 15 ns |
| Вес, г | 0.38 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN-8 |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Product Category: | MOSFET |
| Moisture Sensitive: | Yes |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Typical Turn-On Delay Time: | 10 ns, 10 ns |
| Typical Turn-Off Delay Time: | 20 ns, 20 ns |
| Id - Continuous Drain Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 400 mS, 400 mS |
| Rds On - Drain-Source Resistance: | 7 Ohms, 8 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3300 |