Моя заявка (0)
TBC847B.LM, Транзистор биполярный TO236

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8026600549
Артикул
TBC847B.LM
Бренд
Toshiba
ECCN
EAR99
RoHS
Details
Brand
Toshiba
HTSUS
8541.21.0075
Цена по запросу
(от 7 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор биполярный TO236

Технические параметры

ECCNEAR99
RoHSDetails
BrandToshiba
HTSUS8541.21.0075
SeriesTBC8X7
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
PackagingReel
TechnologySi
Вес, г0.05
Power - Max320mW
RoHS StatusRoHS Compliant
Unit Weight0.000282 oz
ManufacturerToshiba
ConfigurationSingle
Mounting TypeSurface Mount
Mounting StyleSMD/SMT
Package / CaseTO-236-3, SC-59, SOT-23-3
Transistor TypeNPN
Product CategoryBipolar Transistors-BJT
Base Product NumberCUS10 ->
Transistor PolarityNPN
Factory Pack Quantity3000
Operating Temperature150В°C (TJ)
Frequency - Transition100MHz
Pd - Power Dissipation320 mW
DC Current Gain hFE Max450 at 2 mA, 5 V
Supplier Device PackageSOT-23
Gain Bandwidth Product fT100 MHz
Emitter- Base Voltage VEBO6 V
Collector- Base Voltage VCBO60 V
Continuous Collector Current150 mA
Maximum DC Collector Current150 mA
Maximum Operating Temperature+150 C
Vce Saturation (Max) @ Ib, Ic400mV @ 100mA, 5mA
Current - Collector (Ic) (Max)150mA
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
кол-во в упаковке3000
Current - Collector Cutoff (Max)30nA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max50 V
Collector-Emitter Saturation Voltage170 mV
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Voltage - Collector Emitter Breakdown (Max)50V

Техническая документация