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TBC847B.LM

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Код товара
8013766359
Бренд
Toshiba
ECCN
EAR99
RoHS
Details
Brand
Toshiba
HTSUS
8541.21.0075
Цена по запросу
(от 8 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор биполярный TO236

Технические параметры

ECCNEAR99
RoHSDetails
BrandToshiba
HTSUS8541.21.0075
SeriesTBC8X7
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
PackagingReel
TechnologySi
Вес, г0.05
Power - Max320mW
RoHS StatusRoHS Compliant
Unit Weight0.000282 oz
ManufacturerToshiba
КорпусTO236
ConfigurationSingle
Mounting TypeSurface Mount
Mounting StyleSMD/SMT
Package / CaseTO-236-3, SC-59, SOT-23-3
Transistor TypeNPN
Product CategoryBipolar Transistors-BJT
Base Product NumberCUS10 ->
Transistor PolarityNPN
Factory Pack Quantity3000
Operating Temperature150В°C (TJ)
Frequency - Transition100MHz
Pd - Power Dissipation320 mW
DC Current Gain hFE Max450 at 2 mA, 5 V
Supplier Device PackageSOT-23
Gain Bandwidth Product fT100 MHz
Emitter- Base Voltage VEBO6 V
Collector- Base Voltage VCBO60 V
Continuous Collector Current150 mA
Maximum DC Collector Current150 mA
Maximum Operating Temperature+150 C
Vce Saturation (Max) @ Ib, Ic400mV @ 100mA, 5mA
Current - Collector (Ic) (Max)150mA
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
кол-во в упаковке3000
Current - Collector Cutoff (Max)30nA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max50 V
Collector-Emitter Saturation Voltage170 mV
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Voltage - Collector Emitter Breakdown (Max)50V

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