SVD2955T4G, MOSFETs PFET DPAK 60V 12A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8029596091
- Артикул
- SVD2955T4G
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Tab
- Tab
- PPAP
- Yes
- SVHC
- Yes
Цена по запросу
(от 136,90 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Height | 2.38(Max) |
| Package Length | 6.73(Max) |
| EDA / CAD Models | SVD2955T4G by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 10 |
| Структура | MOSFET |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 48 |
| Typical Rise Time (ns) | 45 |
| Особенности | - |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 55000 |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 150 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 6.25 |
| Typical Turn-Off Delay Time (ns) | 26 |
| Maximum Diode Forward Voltage (V) | 2.5 |
| Typical Diode Forward Voltage (V) | 1.6 |
| Typical Gate to Drain Charge (nC) | 7 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate Threshold Voltage (V) | 2.8 |
| Typical Gate to Source Charge (nC) | 4 |
| Typical Reverse Recovery Time (ns) | 50 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 500@25V |
| Typical Reverse Recovery Charge (nC) | 100 |
| Maximum Drain Source Resistance (mOhm) | 180@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 18 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 50@25V |
| Пороговое напряжение на затворе | 2.2V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |