SUP70101EL-GE3, Транзисторы и сборки MOSFET TO220
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- Код товара
- 8048625664
- Артикул
- SUP70101EL-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- TO220AB
- Brand:
- Vishay Semiconductors
- Mounting
- THT
- Fall Time:
- 40 ns
Цена по запросу
(от 740 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | TO220AB |
| Brand: | Vishay Semiconductors |
| Mounting | THT |
| Fall Time: | 40 ns |
| Packaging: | Tube |
| Rise Time: | 40 ns |
| Technology | TrenchFET® |
| Вес, г | 2.72 |
| Gate charge | 0.19µC |
| Technology: | Si |
| Manufacturer | VISHAY |
| Polarisation | unipolar |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Drain current | -120A |
| Manufacturer: | Vishay |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 375W |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 125 nC |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 15mΩ |
| Drain-source voltage | -100V |
| Pulsed drain current | -240A |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 500 |
| Pd - Power Dissipation: | 375 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 20 ns |
| Typical Turn-Off Delay Time: | 110 ns |
| Id - Continuous Drain Current: | 120 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 60 S |
| Rds On - Drain-Source Resistance: | 11.4 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |