SUP53P06-20-E3, Транзистор P-MOSFET, полевой, -60В, -46,8А, 66,7Вт, TO220AB
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- Код товара
- 8070098727
- Артикул
- SUP53P06-20-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SUP
- Fall Time:
- 40 ns
- Packaging:
- Tube
Цена по запросу
(от 323,90 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -60В, -46,8А, 66,7Вт, TO220AB Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SUP |
| Fall Time: | 40 ns |
| Packaging: | Tube |
| Rise Time: | 7 ns |
| Tradename: | TrenchFET |
| Вес, г | 2 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 115 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 104.2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 70 ns |
| Id - Continuous Drain Current: | 53 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 20 S |
| Rds On - Drain-Source Resistance: | 16 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |