SUM90N10-8M2P-E3, MOSFETs 100V 90A 300W
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025618533
- Артикул
- SUM90N10-8M2P-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.29.00.95
- Tab
- Tab
- Case
- D2PAK, TO263
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 437 ₽)
Минимальный заказ: 800 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| Case | D2PAK, TO263 |
| EU RoHS | Compliant with Exemption |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 1 |
| Gate charge | 150nC |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VISHAY |
| Polarisation | unipolar |
| Configuration | Single |
| Drain current | 90A |
| Package Width | 9.65(Max) |
| Package Height | 4.83(Max) |
| Package Length | 10.41(Max) |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 300W |
| Process Technology | TrenchFET |
| Type of transistor | N-MOSFET |
| Структура | MOSFET |
| Gate-source voltage | ±20V |
| On-state resistance | 17mΩ |
| Drain-source voltage | 100V |
| Pulsed drain current | 240A |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 17 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3750 |
| Typical Gate Charge @ 10V (nC) | 97 |
| Typical Gate Charge @ Vgs (nC) | 97@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 23 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 34 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 90 |
| Typical Input Capacitance @ Vds (pF) | 6290@50V |
| Maximum Drain Source Resistance (mOhm) | 8.2@10V |
| Maximum Gate Source Leakage Current (nA) | 250 |
| Крутизна характеристики, S | - |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 90 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 300 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |