SUM110N10-09-E3, MOSFETs 100V 110A 375W
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025479730
- Артикул
- SUM110N10-09-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- Brand:
- Vishay/Siliconix
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 600 ₽)
Минимальный заказ: 800 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 100В, 87А, 375Вт, D2PAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | Vishay/Siliconix |
| EU RoHS | Compliant with Exemption |
| Series: | SUM |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 130 ns |
| Rise Time: | 125 ns |
| Tradename: | TrenchFET |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 110 nC |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 130 |
| Typical Rise Time (ns) | 125 |
| Особенности | - |
| Pd - Power Dissipation: | 375 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 20 ns |
| Typical Turn-Off Delay Time: | 55 ns |
| Id - Continuous Drain Current: | 110 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 3750 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 110 |
| Typical Gate Charge @ Vgs (nC) | 110@10V |
| Forward Transconductance - Min: | 25 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 55 |
| Rds On - Drain-Source Resistance: | 9.5 mOhms |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 110 |
| Typical Input Capacitance @ Vds (pF) | 6700@25V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Maximum Drain Source Resistance (mOhm) | 9.5@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 110 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 375 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |