SUD50P06-15-GE3, Дискретные компоненты TO252
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070047818
- Артикул
- SUD50P06-15-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- DPAK, TO252
- Width
- 6.22mm
- Brand:
- Vishay Semiconductors
- Series:
- SUD
Цена по запросу
(от 273,30 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Дискретные компоненты TO252
Технические параметры
| Case | DPAK, TO252 |
| Width | 6.22mm |
| Brand: | Vishay Semiconductors |
| Series: | SUD |
| Mounting | SMD |
| Pin Count | 3 |
| Fall Time: | 30 ns |
| Rise Time: | 9 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.53 |
| Gate charge | 165nC |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | VISHAY |
| Package Type | TO-252AA |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | -50A |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | SUD50P06-15-BE3 |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 113W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 40 nC |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 28mΩ |
| Drain-source voltage | -60V |
| Pulsed drain current | -80A |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | -1.6V |
| Pd - Power Dissipation: | 113 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 113 W |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 65 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 50 A |
| Maximum Gate Threshold Voltage | -3V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | -1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 61 S |
| Maximum Drain Source Resistance | 28 mΩ |
| Maximum Continuous Drain Current | 50 A |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |