SUD20N10-66L-GE3, Transistor: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070163089
- Артикул
- SUD20N10-66L-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Fall Time:
- 8 ns
- Rise Time:
- 58 ns
- Вес, г
- 1
Цена по запросу
(от 90,93 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Fall Time: | 8 ns |
| Rise Time: | 58 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SUD20N10-66L-BE3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 47 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2000 |
| Power Dissipation (Pd) | 2.1W;41.7W |
| Pd - Power Dissipation: | 83 W |
| Total Gate Charge (Qg@Vgs) | 30nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 38 ns |
| Input Capacitance (Ciss@Vds) | 860pF@50V |
| Typical Turn-Off Delay Time: | 18 ns |
| Continuous Drain Current (Id) | 16.9A |
| Id - Continuous Drain Current: | 35 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 66 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |