SUD19P06-60-BE3, P-Channel 60 V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064060846
- Артикул
- SUD19P06-60-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 30 ns
- Rise Time:
- 9 ns
- Вес, г
- 1
Цена по запросу
(от 620 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 30 ns |
| Rise Time: | 9 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SUD19P06-60-E3 SUD19P06-60-GE3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 40 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 2000 |
| Pd - Power Dissipation: | 38.5 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 8 ns |
| Typical Turn-Off Delay Time: | 65 ns |
| Id - Continuous Drain Current: | 30 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |