SUD19N20-90-E3, Транзистор N-MOSFET, полевой, 200В, 11А, 136Вт, DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070103066
- Артикул
- SUD19N20-90-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SUD
- Fall Time:
- 60 ns
- Rise Time:
- 50 ns
Цена по запросу
(от 299,13 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SUD |
| Fall Time: | 60 ns |
| Rise Time: | 50 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.42 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Part # Aliases: | SUD19N20-90-BE3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 34 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 136 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 15 ns |
| Typical Turn-Off Delay Time: | 30 ns |
| Id - Continuous Drain Current: | 19 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 90 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |