STWA65N65DM2AG, Транзистор: N-MOSFET; MDmesh™ DM2; полевой; 650В; 38А; Idm: 240А
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8073010721
- Артикул
- STWA65N65DM2AG
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Fall Time:
- 11.5 ns
- Packaging:
- Tube
- Rise Time:
- 13.5 ns
Цена по запросу
(от 2 530 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | STMicroelectronics |
| Fall Time: | 11.5 ns |
| Packaging: | Tube |
| Rise Time: | 13.5 ns |
| Вес, г | 4 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Package/Case: | TO-247-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 120 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 600 |
| Pd - Power Dissipation: | 446 W |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Typical Turn-On Delay Time: | 33 ns |
| Typical Turn-Off Delay Time: | 114 ns |
| Id - Continuous Drain Current: | 60 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |