STW7NK90Z, MOSFETs N-Ch 900 Volt 6 Amp Zener SuperMESH
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005442457
- Артикул
- STW7NK90Z
- Бренд
- STMicroelectronics
- HTS
- 8541.29.00.95
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
Цена по запросу
(от 459,82 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 900В, 3,65А, 140Вт, TO247-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 38 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5.15(Max) |
| Package Height | 20.15(Max) |
| Package Length | 15.75(Max) |
| EDA / CAD Models | STW7NK90Z by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Maximum IDSS (uA) | 1 |
| Process Technology | SuperMESH |
| Структура | N-Channel |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 45 |
| Особенности | высоковольтный |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 140000 |
| Typical Gate Charge @ 10V (nC) | 46.5 |
| Typical Gate Charge @ Vgs (nC) | 46.5@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Output Capacitance (pF) | 130 |
| Typical Turn-On Delay Time (ns) | 17 |
| Maximum Drain Source Voltage (V) | 900 |
| Typical Gate Plateau Voltage (V) | 5.9 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Maximum Diode Forward Voltage (V) | 1.6 |
| Typical Gate to Drain Charge (nC) | 25 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Minimum Gate Threshold Voltage (V) | 3 |
| Typical Gate Threshold Voltage (V) | 3.75 |
| Typical Gate to Source Charge (nC) | 8.5 |
| Typical Reverse Recovery Time (ns) | 840 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.8 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1350@25V |
| Typical Reverse Recovery Charge (nC) | 5880000 |
| Maximum Drain Source Resistance (MOhm) | 2000@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 30 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 23.2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 26@25V |
| Максимальное напряжение сток-исток Uси,В | 900 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 6 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 140 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |