STW56N60M2-4,Power MOSFET, N Channel, 600 V, 52 A, 0.045 ohm, TO-247, Through Hole
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001765261
- Артикул
- STW56N60M2-4
- Бренд
- STMicroelectronics
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Brand:
- STMicroelectronics
- Series
- MDmeshв„ў M2 ->
Цена по запросу
(от 1 910 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 600 В 52 А (Tc) 350 Вт (Tc) со сквозным отверстием TO-247-4L
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Brand: | STMicroelectronics |
| Series | MDmeshв„ў M2 -> |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | В±25V |
| Fall Time: | 14 ns |
| Packaging: | Tube |
| Rise Time: | 26.5 ns |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 0.35 |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Package/Case: | TO-247-4 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-247-4 |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 91 nC |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Структура | N-Channel |
| Base Product Number | STW56 -> |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | 150В°C (TJ) |
| Factory Pack Quantity: | 600 |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 26A, 10V |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 350 W |
| Power Dissipation (Max) | 350W (Tc) |
| Supplier Device Package | TO-247-4L |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Typical Turn-On Delay Time: | 18 ns |
| Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
| Typical Turn-Off Delay Time: | 119 ns |
| Drain to Source Voltage (Vdss) | 600V |
| Id - Continuous Drain Current: | 52 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 3750pF @ 100V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Current - Continuous Drain (Id) @ 25В°C | 52A (Tc) |
| Пороговое напряжение на затворе | 3…5 |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 52 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 350 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.045 Ом |