MDmesh DM2 Type N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247 STW48N60DM2
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8009703139
- Артикул
- STW48N60DM2
- Бренд
- STMicroelectronics
- RoHS
- Details
- Brand
- STMicroelectronics
- Width
- 5.15mm
- Brand:
- STMicroelectronics
Цена по запросу
(от 1 936,01 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы MDmesh DM2 обеспечивают низкий уровень RDS (при включении), а благодаря увеличенному времени восстановления обратного xода диода для повышения эффективности, эта серия оптимизирована для полномостовыx ZVS-топологий с фазовым сдвигом.
Технические параметры
| RoHS | Details |
| Brand | STMicroelectronics |
| Width | 5.15mm |
| Brand: | STMicroelectronics |
| Series | MDmesh DM2 |
| Series: | STW48N60DM2 |
| Fall Time | 9.8 ns |
| Pin Count | 3 |
| Rise Time | 27 ns |
| Fall Time: | 9.8 ns |
| Packaging: | Tube |
| Rise Time: | 27 ns |
| Technology | Si |
| Tradename: | MDmesh |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-247 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 70 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 70 nC |
| Number of Channels | 1 Channel |
| Структура | 2 N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 600 |
| Forward Diode Voltage | 1.6V |
| Pd - Power Dissipation | 300 W |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 300 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 W |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Vgs - Gate-Source Voltage | 25 V |
| Typical Turn-On Delay Time | 27 ns |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 131 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Maximum Drain Source Voltage | 600 V |
| Typical Turn-Off Delay Time: | 131 ns |
| Id - Continuous Drain Current | 40 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 40 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 79 mΩ |
| Maximum Continuous Drain Current | 40 A |
| Rds On - Drain-Source Resistance | 0.065 Ohms |
| Rds On - Drain-Source Resistance: | 65 mOhms |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 40 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 300 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±25В |