STW42N65M5, Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-247 Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001045100
- Артикул
- STW42N65M5
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Width
- 5.15mm
Цена по запросу
(от 1 300 ₽)
Минимальный заказ: 13 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный МОП-транзистор N-CH Si 650V 33A с 3-контактным разъемом (3+ язычка) TO-247
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Width | 5.15mm |
| Series | MDmesh M5 |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package Width | 5.15(Max) |
| Package Length | 15.75(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Process Technology | MDmesh V |
| Структура | N-Channel |
| Transistor Material | Si |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 24 |
| Особенности | высоковольтный |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 190 W |
| Typical Gate Charge @ Vgs | 100 nC @ 10 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation (mW) | 190000 |
| Minimum Gate Threshold Voltage | 3V |
| Typical Gate Charge @ 10V (nC) | 100 |
| Typical Gate Charge @ Vgs (nC) | 100@10V |
| Maximum Drain Source Resistance | 79 mΩ |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 61 |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 33 |
| Typical Input Capacitance @ Vds (pF) | 4650@100V |
| Maximum Drain Source Resistance (mOhm) | 79@10V |
| Пороговое напряжение на затворе | 3…5 |
| Максимальное напряжение сток-исток Uси,В | 650 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 33 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 190 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |