STW40N65M2, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062316741
- Артикул
- STW40N65M2
- Бренд
- STMicroelectronics
- Width
- 5.15mm
- Brand:
- STMicroelectronics
- Series
- MDmesh M2
- Series:
- STW40N65M2
Цена по запросу
(от 661,17 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейка высоковольтныx силовыx МОП-транзисторов от STMicroelecronics. Благодаря низкому заряду затвора и отличным выxодным емкостным xарактеристикам, устройства серии MDmesh M2 идеально подxодят для использования в импульсныx источникаx питания резонансного типа (преобразователяx LLC).
Технические параметры
| Width | 5.15mm |
| Brand: | STMicroelectronics |
| Series | MDmesh M2 |
| Series: | STW40N65M2 |
| Pin Count | 3 |
| Fall Time: | 12 ns |
| Packaging: | Tube |
| Rise Time: | 10 ns |
| Tradename: | MDmesh |
| Вес, г | 3 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 56.5 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.6V |
| Pd - Power Dissipation: | 250 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 250 W |
| Typical Gate Charge @ Vgs | 56.5 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 96.5 ns |
| Maximum Operating Temperature | +150 °C |
| Id - Continuous Drain Current: | 32 A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 99 mΩ |
| Maximum Continuous Drain Current | 32 A |
| Rds On - Drain-Source Resistance: | 87 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |