STW20NM60FD, MOSFETs N-Ch 600 Volt 20 Amp
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004673506
- Артикул
- STW20NM60FD
- Бренд
- STMicroelectronics
- Series
- FDmesh
- FET Type
- N-Channel
- Pin Count
- 3
- Vgs (Max)
- ±30V
Цена по запросу
(от 723,17 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 600 В 20А (Tc) 214 Вт (Tc) Со сквозным отверстием TO-247-3
Технические параметры
| Series | FDmesh |
| FET Type | N-Channel |
| Pin Count | 3 |
| Vgs (Max) | ±30V |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Transistor Material | Si |
| Operating Temperature | -65°C ~ 150°C(TJ) |
| Power Dissipation (Pd) | 214W |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V |
| Power Dissipation (Max) | 214W(Tc) |
| Supplier Device Package | TO-247-3 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 214 W |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 37nC@10V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss@Vds) | 1.3nF@25V |
| Maximum Drain Source Voltage | 600 V |
| Continuous Drain Current (Id) | 20A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Drain to Source Voltage (Vdss) | 600 V |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 290 mΩ |
| Maximum Continuous Drain Current | 20 A |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A(Tc) |