STW20NK50Z, MOSFETs N-Ch 500 Volt 17 Amp Zener SuperMESH
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- Код товара
- 8004830911
- Артикул
- STW20NK50Z
- Бренд
- STMicroelectronics
- Width
- 5.15mm
- Brand:
- STMicroelectronics
- Series
- MDmesh, SuperMESH
- Series:
- STW20NK50Z
Цена по запросу
(от 489,09 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 500В, 12,6А, 190Вт, TO247 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 5.15mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| Series: | STW20NK50Z |
| Pin Count | 3 |
| Fall Time: | 15 ns |
| Packaging: | Tube |
| Rise Time: | 20 ns |
| Tradename: | SuperMESH |
| Вес, г | 6 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Package/Case: | TO-247-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| RoHS Compliant | Yes |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 85 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 190 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 190 W |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 28 ns |
| Maximum Drain Source Voltage | 500 V |
| Typical Turn-Off Delay Time: | 70 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 20 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 270 mΩ |
| Maximum Continuous Drain Current | 17 A |
| Rds On - Drain-Source Resistance: | 270 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Крутизна характеристики, S | 13 |
| Максимальное напряжение сток-исток Uси,В | 500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 17 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 190 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±30В |