STW13N80K5, MOSFETs N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package
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- Код товара
- 8004584153
- Артикул
- STW13N80K5
- Бренд
- STMicroelectronics
- RoHS
- Details
- Brand
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series
- MDmesh K5
Цена по запросу
(от 615 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 800В, 7,6А, 190Вт, TO247-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| RoHS | Details |
| Brand | STMicroelectronics |
| Brand: | STMicroelectronics |
| Series | MDmesh K5 |
| Series: | STW13N80K5 |
| Fall Time | 16 ns |
| Packaging | Tube |
| Rise Time | 16 ns |
| Fall Time: | 16 ns |
| Packaging: | Tube |
| Rise Time: | 16 ns |
| Technology | Si |
| Tradename: | MDmesh |
| Вес, г | 6 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | STMicroelectronics |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Product Category | MOSFET |
| Qg - Gate Charge | 29 nC |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 600 |
| Pd - Power Dissipation | 190 W |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 190 W |
| Vgs - Gate-Source Voltage | 30 V |
| Typical Turn-On Delay Time | 16 ns |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-Off Delay Time | 42 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Typical Turn-Off Delay Time: | 42 ns |
| Id - Continuous Drain Current | 12 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 12 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 450 mOhms |
| Rds On - Drain-Source Resistance: | 450 mOhms |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Пороговое напряжение на затворе | 3…5 |
| Максимальное напряжение сток-исток Uси,В | 800 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 190 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.37 Ом |