STW11NK90Z, Транзистор: N-MOSFET, полевой, 900В, 5,8А, Idm: 36,8А, 200Вт, TO247
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8035454947
- Артикул
- STW11NK90Z
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Brand
- STMicroelectronics
Цена по запросу
(от 280 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 900В, 5,8А, Idm: 36,8А, 200Вт, TO247 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Brand | STMicroelectronics |
| Width | 5.15 mm |
| Height | 20.15 mm |
| Length | 15.75 mm |
| Series | N-channel MDmesh |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Fall Time | 50 ns |
| Packaging | Tube |
| Pin Count | 3 |
| Rise Time | 19 ns |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | Si |
| Вес, г | 5 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | TO-247 |
| Корпус | to247 |
| Configuration | Single |
| Mounting Type | Through Hole |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 95 nC |
| Supplier Package | TO-247 |
| Number of Channels | 1 Channel |
| Process Technology | SuperMESH |
| Структура | MOSFET |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 600 |
| Standard Package Name | TO |
| Pd - Power Dissipation | 200 W |
| Typical Fall Time (ns) | 50 |
| Typical Rise Time (ns) | 19 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 200 W |
| Typical Gate Charge @ Vgs | 95 nC @ 10 V |
| Vgs - Gate-Source Voltage | 30 V |
| Supplier Temperature Grade | Industrial |
| Typical Turn-On Delay Time | 30 ns |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 76 ns |
| Maximum Drain Source Voltage | 900 V |
| Id - Continuous Drain Current | 9.2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation (mW) | 200000 |
| Minimum Gate Threshold Voltage | 3V |
| Typical Gate Charge @ 10V (nC) | 95 |
| Typical Gate Charge @ Vgs (nC) | 95@10V |
| Maximum Drain Source Resistance | 980 mΩ |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Continuous Drain Current | 9.2 A |
| Maximum Drain Source Voltage (V) | 900 |
| Rds On - Drain-Source Resistance | 980 mOhms |
| Typical Turn-Off Delay Time (ns) | 76 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9.2 |
| Typical Input Capacitance @ Vds (pF) | 3000@25V |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Maximum Drain Source Resistance (mOhm) | 980@10V |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 900 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.8 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 200 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |