STU2NK100Z, MOSFETs N-Ch, 1000V-6.25ohms Zener SuprMESH 1.85A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004830868
- Артикул
- STU2NK100Z
- Бренд
- STMicroelectronics
- Case
- IPAK
- Width
- 2.4mm
- Brand:
- STMicroelectronics
- Series
- MDmesh, SuperMESH
Цена по запросу
(от 160,70 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 1000В, 1,16А, 70Вт, IPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | IPAK |
| Width | 2.4mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| Series: | STU2NK100Z |
| Mounting | THT |
| Pin Count | 3 |
| Fall Time: | 32.5 ns |
| Packaging: | Tube |
| Rise Time: | 6.5 ns |
| Technology | SuperMesh™ |
| Tradename: | SuperMESH |
| Вес, г | 0.34 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | STMicroelectronics |
| Package Type | IPAK(TO-251) |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 1.16A |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-251-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 70W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 16 nC |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 8.5Ω |
| Transistor Material | Si |
| Drain-source voltage | 1kV |
| Transistor Polarity: | N-Channel |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 70 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 70 W |
| Typical Gate Charge @ Vgs | 16 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7.2 ns |
| Maximum Drain Source Voltage | 1000 V |
| Typical Turn-Off Delay Time: | 41.5 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1.85 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 8.5 Ω |
| Maximum Continuous Drain Current | 1.85 A |
| Features of semiconductor devices | ESD protected gate |
| Rds On - Drain-Source Resistance: | 8.5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 1000 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.85 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 70 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 6.25Ом |