STS8N6LF6AG, 60V 8A 24m @10V 3.2W 2.5V@250uA 1 N-Channel SO-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048282910
- Артикул
- STS8N6LF6AG
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Series:
- STS8N6LF6AG
- Fall Time:
- 7 ns
- Rise Time:
- 20 ns
Цена по запросу
(от 328 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
STMicroelectronics STripFET VI Силовые МОП-транзисторы
Технические параметры
| Brand: | STMicroelectronics |
| Series: | STS8N6LF6AG |
| Fall Time: | 7 ns |
| Rise Time: | 20 ns |
| Tradename: | STripFET |
| Вес, г | 0.2 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 27 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 3.2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 9.6 ns |
| Typical Turn-Off Delay Time: | 56 ns |
| Id - Continuous Drain Current: | 8 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 21 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |