STS5DNF60L, MOSFETs POWER MOSFET Dual N-CH 60V 4A, Транзистор
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062483107
- Артикул
- STS5DNF60L
- Бренд
- STMicroelectronics
- PPAP
- Unknown
- Brand:
- STMicroelectronics
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 147,73 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 5A Автомобильный AEC-Q101 с 8-контактным разъемом SO N T/R
Технические параметры
| PPAP | Unknown |
| Brand: | STMicroelectronics |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Fall Time: | 10 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 28 ns |
| Вес, г | 0.2 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | STMicroelectronics |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Product Category | Power MOSFET |
| Supplier Package | SO N |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SO |
| Factory Pack Quantity: | 2500 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 28 |
| Pd - Power Dissipation: | 2 W |
| Vgs - Gate-Source Voltage: | -15 V, +15 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 15 ns |
| Typical Turn-Off Delay Time: | 45 ns |
| Id - Continuous Drain Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 15@4.5V |
| Forward Transconductance - Min: | 25 S |
| Maximum Gate Source Voltage (V) | ±15 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5 |
| Typical Input Capacitance @ Vds (pF) | 1030@25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 45@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |