STQ1NC45R-AP, Transistor: N-MOSFET; unipolar
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8041298967
- Артикул
- STQ1NC45R-AP
- Бренд
- STMicroelectronics
- Brand:
- STMicroelectronics
- Fall Time:
- 12 ns
- Rise Time:
- 4 ns
- Вес, г
- 0.22
Цена по запросу
(от 85 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | STMicroelectronics |
| Fall Time: | 12 ns |
| Rise Time: | 4 ns |
| Вес, г | 0.22 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | STMicroelectronics |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 7 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2000 |
| Особенности | - |
| Pd - Power Dissipation: | 3.1 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 6.7 ns |
| Id - Continuous Drain Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Rds On - Drain-Source Resistance: | 4.5 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 450 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |