Транзистор полевой STP8NK100Z
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8055405102
- Артикул
- STP8NK100Z
- Бренд
- STMicroelectronics
- Tab
- Tab
- PPAP
- No
- Type:
- MOSFET
- Width
- 4.6mm
Цена по запросу
(от 640 ₽)
Минимальный заказ: 3 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 1000В, 4,3А, 160Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type: | MOSFET |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Series | MDmesh, SuperMESH |
| Series: | STP8NK100Z |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 30 ns |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Rise Time: | 19 ns |
| Tradename: | SuperMESH |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| RoHS Compliant | Yes |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Transistor Type: | 1 N-Channel MOSFET |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 73 nC |
| Process Technology | SuperMESH |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-220 |
| Typical Fall Time (ns) | 30 |
| Typical Rise Time (ns) | 19 |
| Особенности | - |
| Pd - Power Dissipation: | 160 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 160 W |
| Typical Gate Charge @ Vgs | 73 nC @ 10 V |
| Supplier Temperature Grade | Industrial |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 28 ns |
| Maximum Drain Source Voltage | 1000 V |
| Typical Turn-Off Delay Time: | 59 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 6.5 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 160000 |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 73 |
| Typical Gate Charge @ Vgs (nC) | 73@10V |
| Forward Transconductance - Min: | 7 S |
| Maximum Drain Source Resistance | 1.85 Ω |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 28 |
| Maximum Continuous Drain Current | 6.5 A |
| Maximum Drain Source Voltage (V) | 1000 |
| Typical Turn-Off Delay Time (ns) | 59 |
| Rds On - Drain-Source Resistance: | 1.85 Ohms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.5 |
| Typical Input Capacitance @ Vds (pF) | 2180@25V |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Maximum Drain Source Resistance (mOhm) | 1850@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 160 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 1.6 Ом |